Researchers from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Laboratory (PPPL) investigated ways to speed up the cryogenic reactive ion etching process for 3D NAND ...
Phys.org on MSN11 天
Plasma technique doubles etch rate for 3D NAND flash memoryTo store ever more data in electronic devices of the same size, the manufacturing processes for these devices need to be ...
To improve data storage, researchers are perfecting 3D NAND flash memory, which stacks cells to maximize space. Researchers ...
vertical structures for enhancing the storage capacity and performance of 3D-NAND flash memory devices, precise control and prediction of process results to minimize process variability are important.
2 天
商业新知 on MSN2030年全球3D NAND光刻胶市场规模达到1.76亿美元3D NAND光刻胶产品简介 3D NAND光刻胶是一种特殊类型的光刻胶材料,用于制造 3D NAND闪存的光刻工艺。KrF是光刻中常用的光源(波长248 nm),用于在半导体制造工艺中较小的节点(通常低于 ...
In response, Samsung and SK Hynix are strategically... Thursday 16 January 2025 NAND chipmakers intend to maintain pricing after Lunar New Year Leading NAND flash manufacturers have gradually cut ...
If the negotiations work out, it is expected that Nextin will be able to supply 3D NAND wafer... Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...
The narrow, deep holes required for one type of flash memory are made twice as fast with the right recipe, which includes a plasma made from hydrogen fluoride.
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