monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. The lack of highly scalable, native CMOS-integrated light sources has been a major roadblock for the widespread ...

monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5 mA and output powers ...

For that reason, the direct epitaxial growth of high-quality III-V optical gain materials selectively on large-size silicon photonics wafers remains a highly sought-after objective. The large ...

Abstract: Silicon wafers are the most common semiconductor substrate, and their quality plays a decisive role in the service performance of semiconductor devices. Diamond wire sawing is the first and ...

First full wafer-scale fabrication of electrically-pumped GaAs-based nano-ridge lasers on 300 mm silicon wafers. Imec has announced a significant milestone in silicon photonics with the successful ...

Researchers have created the first Group IV electrically pumped laser, overcoming key challenges in silicon photonics. Operating with low power on silicon wafers, it promises efficient, cost-effective ...

Imec has demonstrated electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving ...

According to Official Account Solar 868, on January 9, the Sichuan Provincial Development and Reform Commission released its review opinions on the energy conservation report for the construction ...

Two major Chinese solar manufacturers have been approved by the local government of Sichuan to build silicon wafer plants in the southwestern province, as tight supply and downstream demand boost ...