monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5 mA and output powers ...

For that reason, the direct epitaxial growth of high-quality III-V optical gain materials selectively on large-size silicon photonics wafers remains a highly sought-after objective. The large ...

Imec has demonstrated electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving ...