diode-based RF Switches commonly used in RF front ends of many of today’s tactical and military communication radio systems. Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) ...

Another area of focus has been on reducing the actuation voltage of RF MEMS switches. Traditional electrostatic switches often require high voltages due to their design, which can limit their ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power ...

a miniaturized surface flashover triggered vacuum switch (STVS) with high withstand voltage and high-current is designed in this article. Through optimizing the switch structure, the maximum withstand ...

this high-power GaN switch delivers an ideal solution for replacing traditional PIN diode switches, tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities. The ...

The Skyworks High Voltage Driver Circuit for High-Power PIN Diode Switches is a CMOS/TTL compatible, DC coupled, highspeed PIN diode bias controller. This driver is designed to provide forward ...